Semiconductor non-volatile memory device.

摘要

A semiconductor non-volatile memory device with a memory cell has a memory transistor (17) formed on a semiconductor substrate (1) and a select transistor (19) composed of a thin film transistor provided on an upper surface of the memory transistor and connected in series with the memory transistor. The space occupied by the memory cell is that of one transistor whereby the size of the overall memory cell can be made smaller. <IMAGE>