发明名称 DELAY CIRCUIT.
摘要 <p>A delay circuit wherein MOS transistors (21, 22) for resistors for controlling the delay time of a CMOS inverter (26) are inserted between the source of the CMOS inverter (26) and power supply potentials (GND, Vdd) respectively and the respective sources of the MOS transistors (21, 22) are connected with the power supply potentials (GND, Vdd) respectively. Therefore, by changing the drain currents of the MOS transistors (21, 22) the control voltages (Vn, Vp) thereof are changed respectively. The driving capability of the CMOS inverter (26) is consequently changed, allowing the delay time of the inverter (26) to be regulated. Further, since the sources of the MOS transistors (21, 22) are connected with the power supply potentials (fixed potentials) (GND, Vdd) respectively, the delay time being stable even against disturbance is obtained.</p>
申请公布号 EP0481093(A1) 申请公布日期 1992.04.22
申请号 EP19910908785 申请日期 1991.05.01
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SATOH, HIROSHI;KAIZUKA, MASAO
分类号 H03H11/26;H03K5/00;H03K5/13 主分类号 H03H11/26
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