Transistor structure with reduced collector-to-substrate capacitance.

摘要

A pre-processed substrate structure 71 for a semiconductor device. A subcollector layer 23 is spaced apart from a substrate 21 by a dielectric 25. A relatively small, lightly-doped epitaxial feed-through layer 29 extends through the dielectric between the substrate and the subcollector. A transistor constructed over the subcollector has very low collector-to-substrate capacitance. A plurality of devices on a common substrate are electrically isolated from each other by channel stops formed in the substrate around each device. <IMAGE>