| 摘要 |
PURPOSE:To enable inspection of a pattern only by an optical microscope without using an SEM by generating a pattern of a large area with a small dose to a dose which is necessary for formation of a fine pattern. CONSTITUTION:An active layer 2 is formed on a GaAs semiinsulating substrate 1 and a source electrode 3 and a drain electrode 4 are formed thereon. After a photoresist 5 is applied, a fine pattern for gate formation is directly generated. Thereafter, a pattern of a large area for monitor is directly generated on the same surface as the fine pattern. When development is carried out, a dose A of the fine pattern and dose B of the pattern of a large area are made A>B and a rate of A and B is selected; thereby, a fine pattern [3 and a pattern 7 of a large area can be formed simultaneously in the same development conditions. If inspection is carried out after development using the pattern 7 of a large area as a monitor, it is possible to carry out judgment without directly inspecting the fine pattern 8, thereby enabling inspection only by an optical microscope. |
