Step-cut insulated gate static induction transistors and method of manufacturing the same.

摘要

A step-cut insulated gate static induction transistor can accurately make a channel length and a gate length and is excellent as a high speed transistor but is greatly affected by a deviation in mask alignment in the manufacturing process. This invention utilizes the fact that a gate portion formed in a previous processes is used as a mask in a post portion to thereby self-adjustably form the post portion, thus eliminating the influence of the deveation in mask alignment. In addition, a construction has been invented in which a current flowing through a protion apart from a gate between a drain and a source can be restricted. The aforesaid manufacturing method is also used for this improved construction. <IMAGE>