| 摘要 |
PURPOSE:To form a semiconductor integrated circuit element such as a CCD, etc., on an epitaxial wafer by subjecting it to mirror grinding after epitaxial growth, and uniforming the thickness of the epitaxial layer formed on the semiconductor water. CONSTITUTION:In the specular polishing after epitaxial growth process, using the abrasive where colloidal silica is dispersed in strong alkaline solution, that is, combining the chemical polishing by alkaline solution with the mechanical polishing by silica, by specific abrasive cloth, both sides of the semiconductor wafer 7 are polished into mirror faces. But for specular polishing, it will do to polish only the side of the epitaxial layer 8 of the semiconductor wafer 7. Hereby, the bias of the thickness in the growth of the epitaxial layer 8 can be removed, and the crown 8a, the epitaxial film 8b, which has grown on the rear side of the semiconductor wafer 7, or the irregularity at the rear side of the semiconductor wafer 7 caused by the etching gas such as HCl, etc., can be removed, and a semiconductor wafer 7 excellent in surface flatness can be manufactured. |
