| 摘要 |
PURPOSE:To reduce wirings in which metal wires. are used for gaining an easy pattern layout, design, etc., and to increase reliabilities and manufacturing efficiency of a semiconductor integrated circuit, making the device more integrated and highly-performed one by setting the output of at least one of two logic gates in the tri-state. CONSTITUTION:When writing the bit data, the output of a tri-skate inverter gate 12 goes into the high-impedance state if a write control. line wc which is input into the gate 12 is in the L state. Therefore, the data stored in a storage element disappears and the bit data of the storage element can be surely rewritten based on the bit data which is input into the storage element from the bit line 'bit' through a switching transistor TrT1. At that time, a data inverting current runing through the bit line 'bit', TrT1 and inverter 12 stops flowing. Then, the bit lines 'bit', 'bit' can be formed with relatively high resistance material, without taking a voltage drop in the bit lines 'bit', 'bit' into consideration. Consequently, metal wirings are reduced for an easy design, etc., and the device can be made more integrated and more highly-performed one, with reliabilities and manufacturing efficiency much more increased. |
