发明名称 |
FLOATING GATE TYPE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
An EPROM as a nonvolatile semiconductor memory device includes a semiconductor substrate 1, a gate oxide layer 3 formed on the surface of the semiconductor substrate 1, a plurality of floating gates 4a and 4b formed on the gate oxide layer 3 so as to overlap one another at the portions 4ab thereof with a gate oxide layer 14 sandwiched between the overlapping portions 4ab, and control gate strips 5 formed on a gate oxide layer 6 which overlies the floating gates 4a and 4b.
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申请公布号 |
US5107313(A) |
申请公布日期 |
1992.04.21 |
申请号 |
US19880254234 |
申请日期 |
1988.10.06 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOHDA, KENJI;TOYAMA, TSUYOSHI;ANDOH, NOBUAKI;NOGUCHI, KENJI;KOBAYASHI, SHINICHI |
分类号 |
H01L21/8246;H01L21/8247;H01L27/112;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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