| 摘要 |
PURPOSE:To form fine light patterns of a quadrilateral shape at a high contrast on a semiconductor wafer by providing shifter parts which are formed at a prescribed width along the intermediate parts on the respective sides of a quadrilateral aperture and are light transparent but invert the phase of light. CONSTITUTION:A light shielding layer 11 is formed on a light transparent substrate 10 and the substantially square aperture 11 a is opened in the light shielding layer 11. The shifter parts 12 are formed at the prescribed width along the intermediate parts exclusive of both end parts on the respective sides of the square aperture 11a. Namely, there are no shifter parts 12 in the respective corner parts 13 of the aperture 11a. The shifter parts 12 are light transparent but the phase of the light past the shifter parts 12 is inverted. The intensity of the light spreading in the direction orthogonal with the respective sides of the quadrilateral aperture 13 by the diffraction phenomenon of the small hole is decreased by the interference with the light inverted in phase by passing the shifter parts 12. The fine quadrilateral patterns are formed at the high contrast on the semiconductor wafer in this way. |
