发明名称 |
Ion source having auxillary ion chamber |
摘要 |
An ion source having an auxiliary plasma chamber and a main plasma chamber. The auxiliary plasma chamber receives an ionizable gas and is provided with microwaves with sufficient power to create a high frequency discharge and generate a subplasma for sustaining the creation of an ion plasma in the main chamber. Multiple auxiliary plasma chambers may be used and each may be separately regulated. Protective plates, screens, and coatings may be provided to protect the ion plasma of the main chamber from sputtering a facing wall of the auxiliary plasma chamber.
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申请公布号 |
US5107170(A) |
申请公布日期 |
1992.04.21 |
申请号 |
US19890422724 |
申请日期 |
1989.10.17 |
申请人 |
NISSIN ELECTRIC CO., LTD. |
发明人 |
ISHIKAWA, JUNZO;MATSUBARA, YOSHIO;TAKARA, HIDEAKI;NOGAWA, SHUICHI;SASAI, TOSHIAKI |
分类号 |
H01J27/18;H01J37/08;H05H1/46 |
主分类号 |
H01J27/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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