发明名称 |
Programmable gate array and methods for its fabrication |
摘要 |
Circuitry 12 is formed at the face of a layer semiconductor 34. The circuitry includes a plurality of contact points 22 and 24. At least one anti-fuse 14 is formed in a layer vertically displaced from circuitry 12. Anti-fuse 14 is operable to selectively connect together certain ones of said contact points 22 and 24.
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申请公布号 |
US5106773(A) |
申请公布日期 |
1992.04.21 |
申请号 |
US19900595063 |
申请日期 |
1990.10.09 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHEN, CHEING-LONG;LIU, DAVID K.;TIGELAAR, HOWARD L. |
分类号 |
H01L21/265;H01L21/318;H01L21/82;H01L21/8247;H01L23/525;H01L27/10;H01L27/118;H01L29/788;H01L29/792 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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