发明名称 Programmable gate array and methods for its fabrication
摘要 Circuitry 12 is formed at the face of a layer semiconductor 34. The circuitry includes a plurality of contact points 22 and 24. At least one anti-fuse 14 is formed in a layer vertically displaced from circuitry 12. Anti-fuse 14 is operable to selectively connect together certain ones of said contact points 22 and 24.
申请公布号 US5106773(A) 申请公布日期 1992.04.21
申请号 US19900595063 申请日期 1990.10.09
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 CHEN, CHEING-LONG;LIU, DAVID K.;TIGELAAR, HOWARD L.
分类号 H01L21/265;H01L21/318;H01L21/82;H01L21/8247;H01L23/525;H01L27/10;H01L27/118;H01L29/788;H01L29/792 主分类号 H01L21/265
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