发明名称 |
Gallium antimonide field-effect transistor |
摘要 |
A complementary MISFET uses gallium antimonide as the active material to utilize the high mobilities of both holes and electrons in such material. To avoid interfacial states at the gate interface, the gate insulator is an epitaxial composite layer formed by an appropriate superlattice of which the portion adjacent the channel region is free of intentional doping. The superlattice may comprise, for example, alternating layers of aluminum antimonide and aluminum arsenide or of aluminum antimonide and gallium arsenide.
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申请公布号 |
US5107314(A) |
申请公布日期 |
1992.04.21 |
申请号 |
US19910670057 |
申请日期 |
1991.03.15 |
申请人 |
NEC RESEARCH INSTITUTE |
发明人 |
KAHNG, DAWON;CHADI, JAMES D. |
分类号 |
H01L27/092;H01L29/51;H01L29/78 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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