发明名称 Integrated circuit having field effect transistors
摘要 An integrated circuit includes a logical part and a buffer part. A voltage clamping circuit is provided in parallel with a driver transistor of the logical part of the integrated circuit. The high level of the internal logical circuit is linked to the voltage of a first source power supply that is supplied to the driver transistor. A plurality of diodes may be used, connected in parallel as the voltage clamping circuit. A voltage clamping circuit may be formed alternatively by using a plurality of field transistors, each of the transistors using the gate as an anode and the short-circuited source and drain as a cathode, and the anode and the cathode are connected in series. An input buffer circuit of differential type configuration is used, and by inputting the voltage of a first source power supply to a reference voltage part of the input buffer circuit, the level conversion of an input voltage is made to be linked to variations of the voltage of the source power supply.
申请公布号 US5107144(A) 申请公布日期 1992.04.21
申请号 US19900487721 申请日期 1990.03.02
申请人 NEC CORPORATION 发明人 HIRAYAMA, HIROMITSU
分类号 H03K19/003;H03K19/094 主分类号 H03K19/003
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