| 摘要 |
PURPOSE:To enable etching giving a satisfactory shape even in the presence of a barrier metal and an antireflection film by carrying out etching with a gaseous mixture contg. a gas having hydrogen as a constituent element in the molecule, forming a protective film on the side wall of a formed pattern with an oxidizing gas and carrying out overetching. CONSTITUTION:Etching is carried out with a gaseous mixture contg. 10-99% H-contg. gas until a substrate is exposed, a protective film is formed on the side wall of a formed pattern of an Al-based material with an oxidizing gas and then overetching is carried out. The H-contg. gas is a gas capable of generating H from the molecule by decomposition during etching and one or more among HCl, HBr and HF having low depositability are preferably used.
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