| 摘要 |
<p>PURPOSE:To prevent the shorting defect by the breakdown between input wirings for driving drivers at the time of inputting of static electricity by shorting at least >=2 wirings of the input wiring groups for driving the drivers with a semiconductor. CONSTITUTION:Currents are passed by utilizing the high potential difference generated between the input wirings 6a to 6c at the time of impression of the static electricity by shorting the input wirings 6a to 6c for driving the drivers and the semiconductor layer 20 and the electric conductivity at the time of impression of the high voltage of the semiconductor layer 20. Namely, the high insulation to the extent of having no hindrances in the driving of the drivers within the range of an ordinary driver driving voltage is maintained by utilizing the characteristic of having the nonlinearity in the I-V characteristic of the semiconductor thin film 20 and the generation of the breakdown between the input wirings is obviated when the high voltage, such as static electricity, is impressed and, therefore, the necessary electric conductivity is assured. The shorting defect arising from the breakdown by the static electricity is prevented in this way.</p> |
