发明名称 MANUFACTURE OF LIMIT CURRENT TYPE OXYGEN SENSOR
摘要 PURPOSE:To obtain a sensor wherein solid electrolyte is effectively form in a thin film by forming a solid electrolyte thin film to cover an electrode on a silicon substrate and then making the silicon substrate porous by means of anode formation to form a diffusion limiting member. CONSTITUTION:After a solid electrolyte thin film is deposited to cover an electrode formed on a silicon substrate, the silicon substrate is made porous by means of anode formation to have a diffusion limiting member formed while an electrode is formed also on the solid electrolyte thin film. By thus depositing the solid electrolyte on the silicon substrate before it is made porous, a dense solid electrolyte thin film can be formed while a porous body having uniform hole diameters with goods repeatability can be obtained by means of the anode formation, whereby a sensor with uniform characteristics can be obtained.
申请公布号 JPH04118553(A) 申请公布日期 1992.04.20
申请号 JP19900238484 申请日期 1990.09.07
申请人 NOK CORP 发明人 YAMADA TAKESHI
分类号 G01N27/41 主分类号 G01N27/41
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