| 摘要 |
1285686 Electroluminescence HITACHI Ltd 8 Sept 1970 [12 Sept 1969 2 March 1970] 42953/70 Heading C4S [Also in Division H1] During the epitaxial growth from the gas phase of a layer of an A<SP>III</SP>B<SP>V</SP> compound on to a substrate of the same material, the material of an impurity source is evaporated into a carrier gas (H 2 ) which is passed into the deposition vessel, the impurity source being SnI 4 , SnBr 4 , GeI 4 , GeBr 4 , solid solutions obtained from combinations of these, or a mixture of S and S 2 Cl 2 . Particular semiconductor compounds given are InAs, GaAs, GaP, and GaAsP x(1-x). The process may be used in the formation of light-emitting diodes.
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