Semiconductor nuclear radiation detector - of p-i-n configuration

摘要

A thin (approx 1 micron) layer of N type is formed by diffusion of a group V element into a P type Si body. The spontaneous oxide film is cleaned away and replaced by a film of clean oxide over which a thick film of Si is deposited. This is followed by a film of Li compensating dope, which is then diffused into the P type body through the films of oxide and Si and the N type region and leaving a thick intrinsic zone bounded by a residual thin P region in which typically a radiation window is then etched. High sensitivity is achieved due to low absorption losses.