| 摘要 |
PURPOSE:To enable the stepwise junction of n/n' or p/p' having excellenet getter effect to be formed by a method wherein the first semiconductor wafer and the second semiconductor wafer are junctioned directly or through the intermediary of an insulating layer to form the thin film of thermal oxidation induced laminated defect on the surface of the second semiconductor wafer. CONSTITUTION:The mirror-finished surface of an Si bond wafer l (the second semiconductor wafer) is pre-processed to develop the thermal oxidation induced laminated layer defects and then heat-treated to lead the laminated layer defects 6 in the microcrystal defective parts including the microcracks. Next, the laminated layer defects led-in surface is removed through a polishing step while leaving a part of the laminated layer defects and then oxidized to form a thermal oxide film 3. On the other hand, the surface of an Si base wafer 2 is mirror- finished to laminate the Si bond wafer 1 on the base wafer 2 to be integrated and then the integrated wafers 1, 2 are thermal-oxidized in N2 atmosphere or oxidative atmosphere to form an oxide film 4 on the whole surface of both wafers 1, 2.
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