| 摘要 |
<p>PURPOSE:To integrate and form fine switching elements, etc., and to reduce picture element sizes by directly applying an ISI production technique to the silicon single crystal thin film on a carrier layer. CONSTITUTION:This panel device is formed by using the composite substrate 1 having the laminated structure consisting of the carrier layer 2 having an electrical insulating characteristic and the semiconductor single crystal thin film layer 5 and is constituted of plural picture element electrodes 7 and the plural switching elements 8 which selectively feed electricity to the respective picture element electrodes 7. A counter substrate 2 is disposed to the above-mentioned substrate via a prescribed spacing. A liquid crystal layer 3 is packed in this spacing and the electrooptical modulation of the incident light with which the picture element regions are irradiated according the quantity of the feed electricity held by the respective picture element electrodes 7 is performed. Further, the switching elements 8 for uniformly controlling the spacing size act as a spacer means. Then, the fine picture element electrode groups and the switching element groups are integrally formed on the semiconductor single crystal thin film 5 by fully utilizing the fining technique or ISI production technique. The active matrix type liquid crystal panel device having the microminiature size and high fineness is obtd. in this way.</p> |
