| 摘要 |
PURPOSE:To add a capacitor to a cell node and improve alpha-ray resistance by a method wherein a new capacitor insulating film and an electrode polycrystalline Si layer are added to a memory cell. CONSTITUTION:A polycrystalline silicon layer 11 is built up on a silicon substrate 1 including a contact hole 10 to form the upper gate electrode of a polycrystalline silicon transistor, i.e., the lower gate of a stacked cross-coupled capacitor. After the predetermined part of the layer 11 is removed by using a photoresist layer 12 as a mask, boron ions 13 are implanted to form the source and drain regions 14 of the polycrystalline silicon transistor. An insulating layer is built up over the whole surface to form the insulating layer 15 of the cross-coupled capacitor and, successively, a contact window 16 is drilled. Further, a polycrystalline silicon layer is built up over the whole surface and patterned to form the upper electrode 17 of the stacked capacitor. As the cross-coupled capacitor is formed on a memory cell as described above, the cell area is not increased and the capacitor is added to a cell node and alpha-ray resistance can be improved. |
