| 摘要 |
<p>A method of removing organic coating which is very effective in removing photoresist films in a process of manufacturing semiconductor devices. The organic film is removed by treating a substrate (32) on which a photoresist film (31) is formed in a wet-type processing vessel (34) which is filled with a processing liquid such as a mixture of sulfuric acid and hydrogen peroxide water, or in an ozone processing vessel (34) filled with a liquid obtained by adding ozone or ozone water to ultra-pure water after the dry processing of the substrate with ozone or oxygen plasma.</p> |
