| 摘要 |
<p>In the structure of a memory in which capacitors using ferroelectric substances (109) are integrated on a semiconductor substrate, particularly in the structure of certain one of unit cells forming the memory, an electrode (110) of the ferroelectric capacitor and the source diffusion layer constituting a MOS transistor are connected by a wiring electrode (107). The drain diffusion layer constituting the MOS transistor is connected with a first wiring electrode (114) containing, e.g. Al as its main component. The other electrode (113) of the capacitor is used as a second wiring electrode, leaving as it is. A third wiring electrode (108) containing, e.g. Al as its main component is disposed in parallel with the second wiring electrode, and is connected with the first wiring electrode directly or via the second wiring electrode. Thereby, the memory is suited to larger scale integration, and able to operate at a high speed.</p> |
