| 摘要 |
The invention relates to a dynamic random-access memory device and its method of fabrication. A film of field oxidation (12) is formed on a substrate (11). After forming a gate region (14) and a source-drain region (16), a layer of Ti is formed by evaporation, then the said layer of Ti is etched above the film of field oxidation and above the gate region, then, after converting the layer of Ti into a layer of TiN/TiSi2 (22) by fast thermal anealing under a N2 atmosphere, a film of oxidation is formed by evaporation at low temperature (17) and a layer of phorphorus/boron silicate glass (18), and, finally, after etching the parts of the film of low-temperature oxidation and of the layer of BPSG which are situated above the said layer of TiN/TiSi2, a metal layer (19) is formed by evaporation. <IMAGE>
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