| 摘要 |
PURPOSE:To lower transmittance of alignment light to a resist and to reduce reflection from the surface of a wafer by adding a slight amount of carbon black into the resist. CONSTITUTION:Channel black is added into the polymethyl methacrylate resist in an amount of 0.1wt.%, and stirred with a stirrer in a tightly closed atmosphere. The wafer is coated with this uniformly dispersed resist by the usual spin coating process to a thickness of about 1mum to give the resist having a transmittance of about 50% for 633nm He-Ne laser beams, thus permitting reflection from the surface of the wafer more the necessary amount to be suppressed. A desired pattern can be obtained by transferring an optional pattern by the usual X-ray lithographic method and developing it with a solvent mixture of methyl isobutyl ketone and isopropyl alcohol. |
