Pattern formation with deep ultraviolet core - using photoresist comprising hydroxyl gp.-contg. resin, photochemical acid-former and hydroxyl-contg. ester]

摘要

Formation comprises (i) imagewise UV exposing a substrate which has been coated with a compsn. comprising (a) an OH gp-contg. resin, (b) a photochemical acid-former and (c) a specified cpd. whcih produces OH gps. in presence of an acid; (ii) treating the coating with an organometallic reagent which reacts with and binds to the exposed portions of the coating; and (iii) oxidising the bonded organometallic reagent and selectively removing the unexposed portions of the coatings. (c) is a partial or complete-ester or -ether. USE/ADVANTAGE - Mfr. of integrated semiconductor switches e.g. LSIs. The resist material is highly photosensitive and can, unlike prior-art positive novolak-naphthoquinone diazide resists, be cured throughout thickness using deep UV of 150-300 nm. Good dissolving capabilities at the 0.5 micron level or less.