| 摘要 |
PURPOSE:To increase reliability while realizing a high-speed property by conducting heat treatment at a low temperature and heat treatment at a high temperature in a nonoxidizing atmosphere before coating a layer insulating film on a gate electrode. CONSTITUTION:Heat treatment at a low temperature is conducted within a range of 300-700 deg.C in a nonoxidizing atmosphere before coating a layer insulating film 108 on a gate electrode. Heat treatment at a high temperature is conducted continuously within a range of 800-1,100 deg.C. The layer insulating film 108 is grown, a necessary opening is formed and aluminum wiring 109 is formed. An MOS transistor acquired in this manner obtains reliability equal to a silicon-gate MOS transistor, and has a high-speed property the same as a molybdenum-gate MOS transistor. |
