X-Ray Ringfield lithography.

摘要

Ringfield projection apparatus using x-ray radiation e.g. of 130 ANGSTROM wavelength is suitable for lithographic patterning in the fabrication of integrated circuits at design rules of 0.25 mu m and below. The design permits reduction from an enlarged mask as well as substantial throughput, the latter due to unexpectedly large slit width. Incorporation of a folding mirror (29) as the third of four mirrors improves fabrication expediency by moving the device being fabricated to the other side of the system from the mask.