发明名称 LIGHT RESPONSIVE AVALANCHE DIODE
摘要 Large area semiconductor photodiodes are made free of microcracks by forming on the incident light surface of the device a ring-shaped electrode structure. The electrode structure adds rigidity to the device when the edge surface of the device is later bevelled, a process which creates microcracks normally.
申请公布号 AU8762091(A) 申请公布日期 1992.04.15
申请号 AU19910087620 申请日期 1991.09.06
申请人 ADVANCED PHOTONIX, INC. 发明人 JAN S IWANCZYK
分类号 H01L31/0216;H01L31/0288;H01L31/0352;H01L31/107 主分类号 H01L31/0216
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