| 摘要 |
<p>PURPOSE:To enhance dielectric strength at the cross part of a multilayer wiring preventing a transparent electrode from generation of cloudiness by a method wherein a transparently insulating film to protect the transparent electrode from H2 gas plasma is introduced at the manufacturing process. CONSTITUTION:The transparent electrode 12 is provided on a glass plate 11, the transparently insulating SiO2 film 23 is deposited at about 1,000Angstrom thickness according to the CVD method generating no H2 gas plasma, and an Mo film 13 is adhered selectively. Then a transparently insulating Si3N4 film 14, a non-additive amorphous Si island 15 are formed, and a window 16 is opened in the films 14, 23 to expose the electrode 12. A window is opened also in the film 14 on a scanning signal line 13 at the edge part of the IC at the same time. A metal layer 17 to be used both as an image signal line and the source of the FET, a metal layer 18 to connect the drain of the FET and the electrode 12 through the window 16, and an electrode for the scanning signal line are formed. After then, a liquid crystal is formed using the IC thereof. According to this construction, even when H2 plasma of a large quantity is generated when the gate insulating film 14 is adhered, conductivity an transmittivity of the electrode 12 are not reduced owing to the interposition of the film 23, and liquid crystal picture display having a large contrast ratio can be attained.</p> |
