| 摘要 |
<p>An improved means and method is described for forming a Schottky diode integrated with transistors and other devices which is particularly useful where both control circuits and a large power device are on the same chip. Nested N- (6), P- (8), N- (14) and P+ (26-30) regions are formed on an N+ semiconductor substrate (5). A portion (45H) of the overlying dielectric (45) is removed adjacent one of the P+ regions (28, 29) over the N- region (14) and a Schottky contact (54C) formed to the N- region (14) and an ohmic contact to the adjacent P+ region (28-29). N+ (34, 36) and P+ (26, 30) regions are desirably provided where the junctions between the N-(14) /P-(8) regions and the P-(8) /N-(6) regions intersect the surface to provide contact to the N-(14) and P- (8) regions respectively. A P region (41) extends through the upper N- region (14) and has U-shaped arms (76) which partially overlie an annular shaped P+ region (28-29) and is located between the active region of the PNP transistor (27, 14, 8) and the collector contact (54A, 54E) to serve as a Kelvin probe. The arrangement is particularly valuable where a vertical PNP device (27, 14, 8) without a buried collector region is required.</p> |
