发明名称 Method of reducing particle contamination during sputtering and sputtering device for the implementation of such a method.
摘要 A method of providing a layer on a substrate (1), whereby during a certain process time material (8) is detached from a target plate (6) through a bombardment of this target plate with ions from a gas discharge (4) under reduced pressure in a reactor chamber (2) which is provided with a support (1) for the substrate (1), measures being taken to ensure that material deposited on a surface of chamber component (9) near the support (7) has a better adhesion. According to the invention, the measure for achieving a better adhesion of the material consists in that the surface of the chamber component (9) is bombarded with ions from the gas discharge (4) for at least part of the process time. Material (8) detached from the target plate (6) and hitting the chamber component (9) will have a good adhesion thanks to the ion bombardment, so that no loose particles from the surface of the chamber component (9) can contaminate the layer on the substrate (1). <IMAGE>
申请公布号 EP0480504(A1) 申请公布日期 1992.04.15
申请号 EP19910202530 申请日期 1991.09.30
申请人 N.V. PHILIPS' GLOEILAMPENFABRIEKEN 发明人 VISSER, JAN
分类号 C23C14/34;C23C14/56;H01L21/203;H01L21/285 主分类号 C23C14/34
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