| 摘要 |
<p>PURPOSE:To accurately control and decide the size in the line-width direction and the size in the length direction of a very fine pattern by a method wherein a pattern is formed of one out of an X-ray transmissive substance and an X-ray absorber heavy metal, a first region and a second region are composed of the other out of them, the regions are arranged so as to surround the pattern and, after that, the regions are sliced so as to reveal their cross section. CONSTITUTION:A tantalum (Ta) layer 2 as an X-ray absorber heavy metal is deposited on a silicon (Si) substrate 1; a line-and-space pattern is formed of a silicon dioxide (SiO2) layer 3 on it. In addition, a Ta layer 4 is deposited again so as to cover the pattern of the SiO3 3. Another Si substrate 5 is pasted in such a way that the size of an X-ray mask is ensured and that the pattern of the SiO2 layer 3 is situated nearly in the center of the X-ray mask. After that, the whole assembly is sliced perpendicularly to the pattern of the SiO2 layer 3 as shown by dotted lines. Both faces are polished; a part near the pattern of the SiO3 3 is set to a thickness which is sufficient for an X-ray transmittance. The X-ray mask is completed.</p> |
