| 摘要 |
PURPOSE:To protect a thin film semiconductor substrate against disconnection troubles caused by suction by a method wherein a film of Ti, TiSi, TiN, W, WSi, WN, Mo, MoSi, MoN, or the like is formed in the contact hole of the thin film semiconductor substrate. CONSTITUTION:A field SiO2 film 14, a gate SiO2 film 15, a source 17, a drain 18, and a second field SiO2 film 19 are formed on an Si film 13 provided to an Si substrate through the intermediary of an SiO2 film 12 to constitute a MOSFET, and a TiSi film 21 is provided to the contact hole of the MOSFET through such a manner that a Ti film is formed on a front side, only the Ti film located on a contact is turned into TiSi through an RTA method, and the residual Ti film is removed by plasma etching or the like, and an Al electrode 20 is built. A gate electrode 16 may be previously formed of a polycide structure of a film of TiSi or the like, as a sucking action is not caused by the Al electrode 20, the TiSi film 21 is not required to be provided to the contact hole on the gate electrode 16. |
