| 摘要 |
<p>A field effect transistor signal switching device includes a semiconductor substrate including an active region; an input electrode disposed on the substrate and including a source electrode disposed on the active region and a source pad; first and second output electrodes respectively including first and second drain electrodes disposed on the active region; and first and second control electrodes disposed on the substrate for controlling the selective transmission of an input signal applied to the input electrode to the first and second output electrodes, the first and second control electrodes respectively including first and second gate electrodes disposed on the active region between the source electrode and the first and second drain electrodes, respectively, first and second gate pads, and first and second connecting portions disposed on the substrate respectively electrically connecting the first and second gate electrodes to the first and second gate pads. An input line is connected to the source pad, first and second collinear output lines perpendicular to the input line are connected to the first and second output electrodes, respectively, and first and second control lines are connected to the first and second gate pads, respectively. In one embodiment, the first and second control lines are disposed on opposite sides of the first output line and generally parallel to the input line. In another embodiment, the first and second control lines are disposed on opposite sides of the input line and generally parallel to the first and second output lines. <IMAGE></p> |
