Distributed threshold voltage field effect transistor.

摘要

A distributed threshold voltage TFT comprising a first FET and a second FET connected in series with the first point between the first and the second FET via a series circuit of a first capacitance and a second capacitance. The gate of the second FET is connected on the one hand to the junction point between the first and the second capacitance and on the other hand to the gate of the first FET via a non-linear resistance with a low Ron and a high R<off>. Leakage currents can be kept very low in this DTV FET without an extra external voltage and/or without extra doping. <IMAGE>