| 摘要 |
PURPOSE:To improve the efficiency of extraction of blue light by reducing absorption in an N-type substrate of blue light emission. CONSTITUTION:The thickness (a) of an N-type layer 2 extends from 0.5mum to 20mum in either case. An N-type substrate 1 is removed until thickness (c) reaches 30mum. The substrate 1 may be taken off completely. 50mum or more are required for handling a sample because 50mum or more are needed as the total thickness a+b+c of the N-type substrate 1 and the N-type layer 2 and a P-type layer 3. However, 1mum or more are required as (b) for efficiently injecting currents. These diodes are manufactured through processes in which the N-type layer 2 is homoepitaxial-grown on the N-type substrate 1, the P-type layer 3 is homoepitaxial-grown on the layer 2, one part or the whole of the N-type substrate 1 is removed and electrodes 4, 5 are formed. Accordingly, an SiC blue light-emitting diode having the high efficiency of extraction of blue light can be manufactured. |
