发明名称 |
Amorphous semiconductor solar cell |
摘要 |
An amorphous semiconductor solar cell includes an i type layer which is an at least partially alloyed, substantially intrinsic semiconductor, an n type layer formed on one side of the i type layer, and a p type layer formed n the other side of the i type layer, and the i type layer has its energy bandgap varied in a thickness direction to have a bandgap larger than the bandgap of the p type layer in the vicinity of the interface with the p type layer.
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申请公布号 |
US5104455(A) |
申请公布日期 |
1992.04.14 |
申请号 |
US19910638571 |
申请日期 |
1991.01.07 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
YOKOTA, AKITOSHI;NAKATA, YUKIHIKO;SANNOMIYA, HITOSHI;MORIUCHI, SOTA;INOUE, YASUMI;ITOH, MANABU |
分类号 |
H01L31/0352;H01L31/0376;H01L31/075;H01L31/20 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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