| 摘要 |
A semiconductor laser comprises a grating which has concavities and convexities and which extends in a longitudinal direction of laser stripes including an optical waveguide layer and an active layer. The sides of the active layer extending in a waveguiding direction have convex and concave portions alternately arranged at regular intervals, so that a current passing through the active layer differs, depending on the locations thereof. The concave portions of the active layer are arranged at the same intervals as those between the convexities of the grating. The concave portions of the active layer are located in positions corresponding to the convexities of the grating, and the convex portions of the active layer are located in positions corresponding to the concavities of the grating. Hence, not only the index of the refraction by the grating, but also the laser gain, can differ, depending on the locations of the active layer, since the sides of the active layer have the convex and concave portions alternately arranged at regular intervals. Thus, stable single-longitudinal mode oscillation can be obtained.
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