发明名称 AlGaAs diode pumped tunable chromium lasers
摘要 An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.
申请公布号 US5105434(A) 申请公布日期 1992.04.14
申请号 US19910698038 申请日期 1991.05.10
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY 发明人 KRUPKE, WILLIAM F.;PAYNE, STEPHEN A.
分类号 H01S3/0941;H01S3/106;H01S3/16 主分类号 H01S3/0941
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