| 摘要 |
PURPOSE:To readily form a resist pattern of high resolution property and anti- dryetching property by using acrylic resist, by forming a resist pattern through short wavelength ultraviolet ray and by performing a specific treatment for a resist film thereafter. CONSTITUTION:A polymer thin film which is mainly composed of acrylic polymer or co-polymer is formed on a patterning substrate surface. After the polymer thin film is exposed to a pattern shape by light of a wavelength of 150 to 260nm, a pattern is formed by development treatment. While light of a wavelength of 150 to 260nm is applied to the formed pattern thin film, it is exposed to a discharge-excited gas atmosphere or a gas atmosphere of aromatic ring or quasi-aromatic ring compound gas atmosphere having C=C coupling, C=C coupling or C-Cl coupling in molecule to reform it to a dry etching resistant film. Then, a patterning substrate surface is dry-etched using the reformed pattern thin film as a mask. |
