| 摘要 |
PURPOSE:To make it possible to process easily a notch part at the time of a design rule check on the mask pattern of a semiconductor integrated circuit having a graphic patter, which is complicated in shape, by a method wherein a third graphic pattern for covering the notch part is formed by a formation-of- rectangle processing, an undersize processing and an oversize processing. CONSTITUTION:A formation-of-rectangle processing is performed on a first graphic pattern 1 in a formation-of-rectangle processing means 20 and a normal rectangular pattern 3 is formed. Then, the four sides of the pattern 3 are moved to the inner side by a length L in an undersize processing means 30 to obtain a reduced rectangular pattern 4. Subsequently, a design rule check is performed between the pattern 4 and a second graphic pattern 2 in a design rule checking means 40 and an error graphic pattern 5 is formed. Subsequently, the outline of the pattern 5 is moved by the prescribed length L to the outer side to the pattern 5 in an oversize processing means 50 to form a third graphic pattern 6. Lastly, data on a new mask pattern formed by adding the pattern 6 to the patterns 1 and 2 is produced in a mask pattern update means 60. |
