| 摘要 |
PURPOSE: To enable only an added mask to form an anode side short-circuiting with a simple, required method by covering a second-conductive type region which is formed at an anode side in a first-conductive type semiconductor substrate with a masking layer, structuring it, etching a recess that reaches a base region at the anode side, and forming a short-circuiting range in the recess. CONSTITUTION: A second-conductive type region 4 is formed on the entire surface of a cathode side in a first-conductive type semiconductor substrate, and the entire surface of the region is covered with a masking layer 5. Then, the layer 5 is structured by photolithography, and a recess 7 that passes through the region 4 and reaches a base region 1 at the anode side is etched, corresponding to the structure in the semiconductor substrate. Then, a first-conductive type region 8 with a doping concentration higher than that of the anode base region 1 is generated in the recess 7, and the layer 5 is eliminated. Then, the surface at the anode side of the semiconductor substrate is covered with a contact layer 9.
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