| 摘要 |
PURPOSE:To perform highly accurate analysis by heating the liquid droplets obtained by the chemical decomposition of a semiconductor thin film, evaporating the liquid solvent, and analyzing the super minute amount of an element contained in the thin film by using a total-reflection type fluorescence X-ray analyzer. CONSTITUTION:An oxide film formed on the surface side of a wafer is decomposed by chemical reaction with mixed gas (b), and reaction decomposed liquid 6 is present as liquid droplets on the surface as spots. Then, a wafer 5 is taken out of a tightly sealed Teflon container 1. The liquid 5 is collected to the central part of the wafer 6, and infrared rays are cast. As a result, the solvent in the liquid 6 is evaporated. Thereafter, the metal impurities contained in the oxide film of the wafer 5 is analyzed by using a total-reflection type fluorescence X-ray analyzer. Thus, the detecting limit of the element to be analyzed is enhanced, and the accuracy in analysis is improved. |
