Integrated current sensor for current limiting and measuring - has components sensitive to magnetic field and excitation paths formed by film technique on substrate
摘要
<p>The current sensor uses a number of magnetic field sensors and associated emergising line conductors insulated from one another on a common substrate. The geometric arrangement is in a U, L or O configurationand usesa thin-film,thick-film or hybrid technique so that each magnetic field sensor is subjected to a fluxdensity proportional to the energising current. Each magnetic field sensor pref comproses a Hall element, a field plate, a magneto resistive sensor or a bipolar or MOSFET magneto transistor. ADVANTAGE-High miniaturisation.</p>
申请公布号
DE4031560(A1)
申请公布日期
1992.04.09
申请号
DE19904031560
申请日期
1990.10.05
申请人
SEITZER, DIETER, PROF. DR.-ING., 8520 ERLANGEN, DE
发明人
SEITZER, DIETER, PROF. DR.-ING.;NEUDECKER, JOHANNES, DIPL.-ING.;FROHMADER, KARL PETER, DR.-ING., 8520 ERLANGEN, DE