Microwave plasma treatment appts. for semiconductor - useful for thin film and etching in electronics, comprises chamber partition of microwave transparent material

摘要

Appts. has gas supply appts. (31), a vacuum treatment chamber (6) having evacuation appts., appts. (2) for microwave introduction into the chamber (6), and an emitter (4) which is connected to the end of the microwave introduction appts. (2) and which enlarges the microwave field. Pref. appts. comprises chamber partition (8) for the plasma, the partition made of microwave transparent material, sealing an opening section of the emitter (4) and forming part of the chamber wall. Appts. also has (a) a magnetic field generating device (5) which can generate electron cyclotron resonance at the microwave frequency and (b) a device (12, 13, 14) for reducing pressure within the emitter (4), to give a discharge-free condition for reducing the pressure difference at the partition (8), and for microwave introduction into the chamber (6). Pref. appts. has wall surface at the side of the chamber made of microwave-reflective material to maintain microwave symmetry. USE/ADVANTAGE - E.g. LCDs, linear sensors and thin film magnetic leads. Large area, uniform, microwave plasma treatment at high rates.