| 摘要 |
<p>PURPOSE:To obtain an electric field emission device with good emitting efficiency and high current density by sharpening a cathode tip and using a metal with low resistance and good heat resistance and heat radiating ability, as an electrode material inside a projection. CONSTITUTION:On a first substrate 1 made of Si, many holes 2 are formed by anisotropic etching. Then a thin film 3 of a first metal (W, for example), having low work function and high melting point is attached on the substrate 1, including holes 2 of inverted pyramid shapes, by spattering or deposition, on which a second metal (Cu, for example,) 4 having high conductivity and high thermal conductivity is attached by plating, etc., to flatten the surface. The flattened plated surface is jointed to a substrate 5 having a high heat radiation effect by welding, etc. The first substrate 1 is removed to expose projection 6 consisting of the first metal 3 and the second metal 4. RIE(Reactive Ion Etching) is applied to the substrate surface including the projection part 6. Electric field emission device with good emitting effect and high current density can be thereby obtained.</p> |
