| 摘要 |
<p>The semiconductor memory device according to this invention includes a memory cell array which comprises plural memory cells arranged in row and column direction in the form of an array, plural bit line pairs for connecting these memory cells in the unit of a column and word lines for connecting these memory cells in the unit of a row, sense amplifiers which are respectively connected to each of the bit line pairs at one end thereof and which amplify the potential difference between the bit lines of each pair in response to activation signals, and transfer gate means which divide said plural bit lines respectively into at least two portions corresponding to control signals, the sense amplifiers for the bit line pairs which belong to the nth columns (n is an odd numbered integer) thereof being arranged on one end of the bit line pairs and on the other end thereof for the those which belong to the (n+1)th columns. This construction of the device can prevent crosstalk which would otherwise be caused between adjacent bit line pairs immediately after the sense amplifiers are activated. <IMAGE></p> |
