| 摘要 |
PURPOSE:To prevent the formation of intermetallic compound by installing bumps mainly made of zinc in a semiconductor device where an electrode consists of a conductor layer whose main component is aluminum. CONSTITUTION:A conductive film is deposited on a glass-made insulation board 11, and processed into a wiring pattern so as to form a board electrode 12. Bumps 13 made of zinc whose grain size ranges from 20 to 30mum, are laid out on this board electrode 12. The bumps 13 are aligned so as to correspond to device electrodes 15 made of aluminum and installed in a semiconductor device 14 and heated under pressure from the side of the semiconductor device 14, and the semiconductor device 14 is facedown-connected with the insulation board 11. This construction makes it possible to prevent the formation of intermetallic compounds near the junctions of the device electrode 1 and the bumps 13 and hence to protect connections from defects caused by burnout. |
