| 摘要 |
<p>A trench capacitor which has a plurality of capacitor plates (38, 42) separated by a dielectric (40) within a trench (20) on a substrate (30). Both plates are located in the trench, and extend out of the trench. The capacitor has first and second portions, one depending from the other, one parallel to the side walls of the trench, the other extending laterally along the top of the substrate. A plate (38) located closest to the side wall of the trench may be a field shield layer and that is coupled to ground. The other plate (42) may be polysilicon. The other plate may be tied to a source of variable potential i.e. the data. A plurality of sacrificial layers (44, 46) are established over the structure and the structure thus formed is then patterned and etched. A pass transistor (14) is formed adjacent to the trench capacitor, and a connecting layer (72) is established connecting the second plate of the trench capacitor to the source/drain region (66) of the pass transistor. The connecting layer (72) makes electrical contact between the second capacitor plate (42) and source/drain (66) of the pass transistor and is insulated (58) from other layers in the capacitor and pass transistor. <IMAGE></p> |
